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| MITSUBISHI IGBT MODULES MG800J1US52A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MG800J1US52A FEATURE The electrodes are isolated from case. Enhancement-mode Integrates fault-signal output circuit in package. (Short-Circuit and Over-Current) UL Recognized Yellow Card No.E80276 File No.E80271 APPLICATION General purpose inverters, servo drives and motor controls OUTLINE DRAWING & EQUIVALENT CIRCUIT Dimensions in mm 4-6.50.3 1180.8 1040.6 G JAPAN C C SEN SEN 110.6 110.6 470.6 540.6 680.8 C E 4-M6 C E 3-M4 E E E E G Equivalent Circuit 260.6 440.6 100.6 8.50.6 25.5 -1 1160.8 Weight: 420g 22.5 -1 20 660.8 3.50.5 +2 +2.3 -1 +2 Dec.2005 MITSUBISHI IGBT MODULES MG800J1US52A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MAXIMUM RATINGS (Ta = 25C) Symbol VCES VGES VSES IC ICP IF IFM PC Tj Tstg Vlsol -- -- Parameter Collector-emitter voltage Gate-emitter voltage Sense-emitter voltage Collector DC current 1ms Forward DC current 1ms Collector power dissipation Junction temperature Storage temperature range Isolation voltage Screw Terminal (M4/M6) torque Mounting Conditions Ratings 600 20 40 800 1600 800 1600 2500 150 -40 ~ 125 2500 (AC 1 minute) 2/3 3 Unit V V V A A W C C V N*m TC = 25C ELECTRICAL CHARACTERISTICS (Ta = 25C) Symbol IGES ICES VGE(off) VCE(sat) Cies td(on) tr ton td(off) tf toff VF trr ISES IC(SEN-START) VSEN Rth(j-c) Parameter Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching Turn-on time Turn-off delay time time Fall time Turn-off time Forward voltage Reverse recovery time Sense leakage current Sense Sense start current Sense voltage Thermal resistance Test conditions VGE = 20V, VCE = 0 VCE = 600V, VGE = 0 IC = 800mA, VCE = 5V IC = 800A, Tj = 25C VCE = 10V, VGE = 0, f = 1MHz Inductive load VCC = 300V IC = 800A VGE = 15V RG = 2 IF = 800A, VGE = 0 IF = 800A, VGE = -15V, di/dt = 1500A/s VSEN - E = 40V, VCE = 0, VGE = 0 VGE = 15V, VSE = 14.8V VGE = 15V, IC = 3000A Transistor stage Diode stage Min. -- -- 5.5 -- -- -- -- -- -- -- -- -- -- -- 1300 -- -- -- Limits Typ. -- -- 7.0 2.1 93000 0.3 0.25 0.55 0.62 0.15 0.77 2.3 0.08 -- -- -- -- -- Max. 500 4.0 8.0 2.7 -- -- -- -- -- 0.3 -- 3.0 0.15 200 -- 10 0.05 0.1 Unit nA mA V V pF s (Note 1) (Note 1) (Note 2) (Note 2) V s nA A V C/W Dec.2005 MITSUBISHI IGBT MODULES MG800J1US52A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Note 1: Switching time and reverse recovery time test circuit and timing chart Switching time test circuit Timing chart VGE 10% 90% RG -VGE IF VCC IC L Irr IC trr 90% Irr 20% Irr 90% RG 10% td(on) td(off) tf 10% Note 2: Sense start current and sense voltage test circuit Test circuit *Measurement in the complete charge period. Timing chart Complete charge period VGE IC Inductance 3000A IC(SEN-START) 15V 330 VSE IC VSE 14.8V 15V VSEN Dec.2005 MITSUBISHI IGBT MODULES MG800J1US52A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Rank symbol 18 19 20 21 22 23 24 25 26 27 MIN. 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 MAX. 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 Rank symbol B C D E F G H MIN. 1.5 1.7 1.9 2.1 2.3 2.5 2.7 MAX. 1.8 2.0 2.2 2.4 2.6 2.8 3.0 VCE(sat), VF Rank JAPAN C E C E E Serial No. MG800J1US52 T52AA1 Lot No. G SEN 22E 000001 Dec.2005 MITSUBISHI IGBT MODULES MG800J1US52A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS PERFORMANCE CURVES IC - VCE 1600 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) IC - VCE 1600 Common emitter Tj = 125C 1200 VGE = 20V Common emitter Tj = 25C 1200 VGE = 20V 800 15 12 15 12 800 400 10 9 0 0 1 2 3 4 5 400 10 9 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) VCE - VGE COLLECTOR-EMITTER VOLTAGE VCE (V) VCE - VGE COLLECTOR-EMITTER VOLTAGE VCE (V) 10 Common emitter Tj = 25C 10 Common emitter Tj = 125C 8 8 6 6 4 1600A 2 800A IC = 400A 0 0 4 8 12 16 20 4 1600A 800A IC = 400A 2 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VGE (V) IC - VGE 1600 COLLECTOR CURRENT IC (A) IF - VF 1600 FORWARD CURRENT IF (A) Common emitter VCE = 5V 1200 1200 125C 800 Tj = 25C 400 Common cathode VGE = 0 0 0 1 2 3 4 5 800 125C 400 Tj = 25C 0 0 2 4 6 8 10 12 14 GATE-EMITTER VOLTAGE VGE (V) FORWARD VOLTAGE VF (V) Dec.2005 MITSUBISHI IGBT MODULES MG800J1US52A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS SW time - RG 104 7 5 3 2 SW time - IC 104 toff td(off) ton 7 5 SWITCHING TIME (ns) 103 7 5 3 2 SWITCHING TIME (ns) 3 2 toff 103 7 5 ton 3 2 td(off) td(on) tr Tj = 25C Tj = 125C tf Common emitter VCC = 300V RG = 2 VGE = 15V 400 600 800 td(on) tf tr 102 7 5 3 2 102 7 5 3 2 101 Common emitter VCC = 300V IC = 800A VGE = 15V 0 4 8 Tj = 25C Tj = 125C 12 16 101 0 200 GATE RESISTANCE RG () COLLECTOR CURRENT IC (A) SW loss - RG 103 102 Eon SW loss - IC SWITCHING LOSS Eon, Eoff (mJ) SWITCHING LOSS Eon, Eoff (mJ) 7 5 3 2 7 5 3 2 Eoff 102 7 5 3 2 Eoff Common emitter VCC = 300V IC = 800A VGE = 15V Tj = 25C Tj = 125C 0 4 8 12 16 101 7 5 3 2 Eon Common emitter VCC = 300V RG = 2 VGE = 15V Tj = 25C Tj = 125C 0 200 400 600 800 101 7 5 3 2 100 100 GATE RESISTANCE RG () COLLECTOR CURRENT IC (A) PEAK REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) 103 7 5 3 2 PEAK REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) Irr, trr - RG Irr, trr - IF 103 7 5 3 2 trr Irr 102 Common emitter VCC = 300V 3 IC = 800A VGE = 15V 2 Tj = 25C Tj = 125C 1 10 0 5 10 7 5 102 7 5 3 2 trr Irr 15 20 101 Common emitter VCC = 300V RG = 2 VGE = 15V Tj = 25C Tj = 125C 400 600 800 0 200 GATE RESISTANCE RG () FORWARD CURRENT IF (A) Dec.2005 MITSUBISHI IGBT MODULES MG800J1US52A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Edsw - RG REVERSE RECOVERY LOSS Edsw (mJ) REVERSE RECOVERY LOSS Edsw (mJ) Edsw - IF 101 7 5 3 2 101 7 5 3 2 100 7 5 100 7 5 3 2 10-1 Common emitter VCC = 300V 3 IC = 800A VGE = 15V 2 Tj = 25C Tj = 125C 0 5 10 15 20 10-1 Common emitter VCC = 300V RG = 2 VGE = 15V Tj = 25C Tj = 125C 0 200 400 600 800 GATE RESISTANCE RG () FORWARD CURRENT IF (A) VCE, VGE - QG COLLECTOR-EMITTER VOLTAGE VCE (V) C - VCE 20 GATE-EMITTER VOLTAGE VGE (V) 500 106 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 CAPACITANCE C (pF) 400 VCE =0V 300 16 105 Cies 300 100 200 200 12 104 Coes 8 100 0 0 Common emitter 4 RL = 0.375 Tj = 25C 0 1000 2000 3000 4000 5000 6000 CHARGE QG (nC) 103 VGE = 0V f = 1MHz TC = 25C 2 3 5 7 101 2 3 Cres 102 0 10 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Rth - tW 100 TRANSIENT THERMAL RESISTANCE Rth(j-c) (C/W) 7 TC = 25C 5 3 2 7 5 3 2 10-1 DIODE STAGE 10-2 7 5 3 2 TRANSISTOR STAGE 10-3 -3 10 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 PULSE WIDTH tW (s) Dec.2005 |
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